Chemistry Related to Semiconductor Growth Involving Organometallics
Abstract
Workshop Summary---(1) OMVPE Technology Requirements for III-V compounds Chemistry Related to Semiconductor Growth Involving Organometallics: Semiconductor Device Requirements; Army II-VI Deposition Program / MOMBE for IR Detector Applications; Epitaxial Growth of III-V's and II-VI's Using Organometallics; Electrical Device Requirements; Environmental and Safety Issues in MOVPE. (2) Chemistry Related to Semiconductor Growth Involving Organometallics: Quantum Chemistry of Vapor Phase; Carbon Doping and Selective Epitaxy: Tailoring Growth Chemistry in MOVPE. (3) TBA/TBP Precursors in GaAs and InP MOCVD: Single Source Precursors for III-V OMCVD Growth. (4) Alternate Sources For MOMBE of AlGaAs: Mechanism of Incorporation of Impurities and Analysis of Carbon Contamination. (5) Growth on Nonplanar and Patterned Substrates. (6) CBE Growth Mechanisms: TriMethylamine Alane: A New Robust Precursor for MOMBE Growth of AlGaAs. (7) Real-Time Determinations of OMCVD growth Kinetics on GaAs by Reflectance-Difference Spectroscopy: Photoreflectance Measurements; Growth and Doping Mechanisms for HgCdTe; Photoassisted CBE of CdTe and HgCdTe Alloys; In-situ Analysis of ZnSe Growth by OMCVD Using X-ray Scattering; Biodegradation of GaAs IC Chips and Wafers; Detailed Models of Compound Semiconductor Growth by MOCVD; Gas Phase Probes of GaAs Cluster Chemistry; Photodecomposition of Organometallic Compounds at 193 nm; Manufacturing Issues in MOCVD Compound Semiconductor Technology. (ttl)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 11, 1990
- Accession Number
- ADA229489
Entities
People
- G. R. Husk
- J. T. Prater
- K. A. Jones
- R. J. Paur
Organizations
- Army Research Office