Chemistry and Defects in Semiconductor Heterostructures. Materials Research Society Symposium Proceedings. Volume 148
Abstract
The intention of the editors was to bring together an interdisciplinary and international group of researchers working on various aspects of semiconductor heterostructures so that we could all learn from each other. In particular, we hoped to forge new links between those who study chemical interactions at heterostructure interfaces and those who are concerned with the effects of interfacial defects on the electrical and optical properties of semiconductor structures. The fact that there must be some relationship between chemical reactivity and defect formation has long been recognized, but as yet there is no detailed understanding of the actual mechanisms involved. Scientists studying either the causes or the effects of interfacial defects must appreciate all the issues and work closely with each other. Only through such collaboration can the formation of semiconductor interfaces be truly understood and, eventually, their properties controlled. If this Symposium and the resulting book have stimulated only a few such interactions, then we feel that our efforts have been successful. (TTL)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1990
- Accession Number
- ADA229585
Entities
People
- Eicke R. Weber
- Joan B. Ballance
- Mitsuo Kawabe
- R. Stanley Williams
- Timothy D. Sands
Organizations
- Materials Research Society