Interfacial and Thin Film Chemistry in Electron Device Fabrication

Abstract

The fourth year's progress on the Columbia URI program on Interfacial and Thin-Film Chemistry in Electron Device Fabrication is reported. Progress has been made in three broad areas: MBE Growth and Devices, Laser Surface Interactions, and Fundamentals of Processing Gas/Surface Interactions. Examples of specific results include the first study of laser-assisted Cl2 etching of copper, many new tunnelling and optical devices in layered semiconductors; a new 2-phase 2DEG-CCD; seminal studies of the Si-YBaCuO system; and the first observation of thin film growth by photoelectron injection. (JS)

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Document Details

Document Type
Technical Report
Publication Date
Nov 20, 1990
Accession Number
ADA229609

Entities

People

  • D. Auston
  • E. Fossum
  • G. Flynn
  • N. Turro
  • Richard M. Osgood

Organizations

  • Columbia University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Fabrication
  • Laser Beams
  • Materials Processing
  • Materials Science
  • Modules (Electronics)
  • Organic Chemistry
  • Power Electronics
  • Quantum Wells
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene