An Examination of Radiation-Induced Bit-Upset Patterns in Semiconductor Memories

Abstract

The interaction of photon radiation with semiconductor memories is well known to cause errors in the memory contents by a 'bit-flap process. Using a MOSAID MS2200 memory tester system, experiments were carried out to determine the number and location of these errors for two DRAMs and one SRAM exposed to LINAC and 60Co sources. The results showed that the errors are not, in general, randomly located and are highly dependent on chip architecture. This is particularly true for the DRAMs where the bits adjacent to decoder and ground lines were observed to be the first to flip. Canada. (rrh)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1990
Accession Number
ADA229659

Entities

People

  • E. L. Karam
  • Thomas Cousins

Organizations

  • Defence Research and Development Canada

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Aspect Ratio
  • Capacitors
  • Dose Rate
  • Dosimetry
  • Electronics
  • Electrons
  • Gamma Rays
  • Integrals
  • Ionizing Radiation
  • Linear Accelerators
  • Memory Devices
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Sensitivity
  • Steady State
  • Time Intervals

Readers

  • Computer Programming and Software Development.
  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Microelectronics