Position Expectation Value and Oscillator Strength of a Biased Asymmetric Quantum Well

Abstract

The change in the position expectation values of an electron in the first three quasibound states of the structure as a function of the external (biased) voltage is calculated. At the resonance voltage, the most probable position to find an electron in the second and third quasibound states lies in the barrier separating the two wells, and these two states interchange their identities, meaning that the ground state of the narrow well becomes the first- excited state of the wide well and vice versa. Keywords: Quantum well, Biased asymmetric, Oscillator strength, Position expectation, Resonance, State parties.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1990
Accession Number
ADA229803

Entities

People

  • Lakshmi N. Pandey
  • Thomas F. George

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Weapons Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Electrons
  • Ground State
  • Identities
  • Materials
  • Military Research
  • New York
  • Oscillators
  • Physics
  • Quantum Tunneling
  • Quantum Wells
  • Resonance
  • Transitions
  • Tunneling
  • United States
  • Universities

Readers

  • East Asian Political and Security Studies within the Soviet Union
  • Molecular Photonics/Laser Physics
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots