Fluorescent Lifetime Measurements of Rare Earth Elements in Gallium Arsenide
Abstract
Lifetime measurements of the excited states of three GaAs semiconductors doped with the rare earth elements Erbium (ER), Praseodymium (Pr) , and Thulium (Tm) has been studied using a pulsed nitrogen laser and germanium detector. The measurements were made with an experimental set up with a system response time of 0.34 micro seconds. A 330 milliwatt nitrogen laser with a wavelength of 3370 angstrums was used to excite transitions of the rare earth elements.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1990
- Accession Number
- ADA229865
Entities
People
- Danny J. Topp
Organizations
- Air Force Institute of Technology