Electrical Behavior on N-Type Dopants in AlGaAs Alloys: Shallow Levels and DX Centers

Abstract

The electrical properties of n-type A LxGal-xAs are governed by deep donor states, formerly called DX centers, and created by the isolated donor atoms. At very low AL compositions, such deep donors become resonant with the gamma minimum. For GaAs compositions, the electron thermal emission has been studied under hydrostatic pressure. It is suggested that deep donors show a discrete structure of energy levels, revealed in their thermal emission kinetics. An analysis of the capacitance behavior of AlGaAs n - type regions (x > 0.2) has been performed for Si and Sn donors. Electron capture kinetics has been modeled.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1990
Accession Number
ADA229957

Entities

People

  • Elias Munoz

Organizations

  • Technical University of Madrid

Tags

Communities of Interest

  • Advanced Electronics
  • C4I
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Bipolar Junction Transistors
  • Conduction Bands
  • Electrical Properties
  • Electron Emission
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Levels
  • Heterojunction Bipolar Transistors
  • High Electron Mobility Transistors
  • Hydrostatic Pressure
  • Measurement
  • Power Electronics
  • Semiconductors
  • Space Charge

Fields of Study

  • Materials science

Readers

  • Groundwater Contamination Remediation.
  • Structural Dynamics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics