Selective Heteroepitaxial Growth of Compound Semiconductors

Abstract

The effect of reduced growth area on the lattice mismatch accommodation of InxGa1-xAs/GaAs and GaAs/Si grown by molecular beam epitaxy (MBE) has been studied with cross-sectional transmission electron microscopy (XTEM)and cathodoluminescence (CL). Results indicate that the use of step- composition grading and linear-composition grading are particularly effective when combined with reduced growth areas and InxGa1-xAs compositions up to x = 0. 25. Blanket areas with the same composition grading techniques exhibited randomly distributed threading dislocation-free regions approximately 30 microns in diameter, which were bounded by high-density dislocation pile-ups. (JS)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1990
Accession Number
ADA230016

Entities

People

  • Edward Beam
  • Yung-chung Kao

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Crystal Lattices
  • Crystal Structure
  • Crystallography
  • Crystals
  • Electron Microscopes
  • Electron Microscopy
  • Epitaxial Growth
  • Materials
  • Mean Free Path
  • Microscopy
  • Phase Separation
  • Polycrystals
  • Three Dimensional
  • Transitions
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene