Scanning Tunneling Microscopy of Semiconductor Surfaces

Abstract

This is a summary of the results during the first year of a research program aimed at studying the atomic structure of semiconductor surfaces using scanning tunneling microscopy (STM). This research has concerned epitaxial growth of metals on the (111) and the (100) surfaces of silicon, with particular emphasis on the Si(100) surface. We have studied In, Sn, and Sb on Si(100), and Au on Si(111), focusing on phenomena such as order and disorder in surface reconstructions, nucleation and growth, growth anisotropy, and rearrangement of the Si substrate step distribution.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1990
Accession Number
ADA230064

Entities

People

  • Calvin Quate
  • J. Nogami

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Structure
  • Atoms
  • Diffraction
  • Domain Walls
  • Electron Diffraction
  • Epitaxial Growth
  • Group Iii Metals
  • High Temperature
  • Images
  • Low Temperature
  • Materials
  • Metals
  • Microscopy
  • Molecular Beam Epitaxy
  • Phase Transformations
  • Semiconductors
  • Transitions

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene