Growth, Characterization and Device Development in Monocrystalline Diamond Films

Abstract

In this reporting period, diamond films have been deposited on various polycrystalline metal and (001) Si substrates by biased hot filament chemical vapor deposition, the films characterized by TEM, x-ray diffraction and Raman and Auger spectroscopies and MESFET devices modeled from the properties of diamond. In addition Cu single crystals were implanted at 900 deg C with C ions and other studies initiated in an attempt to achieve heteroepitaxial growth of diamond. Films grown on Si, Ni and W exhibited the highest quality diamond films from the viewpoint of Raman characterization. The model of the MESFET device with gate length = 1 micron and width = 1 mm showed that significant degradation in RF performance is not expected at 10 GHz.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1990
Accession Number
ADA230186

Entities

People

  • Jeffrey T Glass
  • Klaus J. Bachmann
  • R. J. Trew
  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Engineering
  • Chemistry
  • Crystal Lattices
  • Crystallography
  • Crystals
  • Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Materials Science
  • Microscopy
  • Raman Spectra
  • Raman Spectroscopy
  • Silicon Carbide
  • Spectra
  • Spectroscopy
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.