Pseudomorphic Semiconducting Heterostructures from Combinations of AlN, GaN and Selected SiC Polytypes: Theoretical Advancement and Its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development
Abstract
In this reporting period, research has been conducted in three primary areas: (1) development and application of computer codes concerned with the prediction of properties of pseudomorphic structures, (2) the growth of GaN/ A1N pseudomorphic structures and (3) the construction of a growth system for the deposition of SiC/A1N/GaN pseudomorphic structures. The van der Merwe-Reiss rigid model has been extended theoretically via computer algorithms for polyatomic systems by allowing several interaction potentials to act simultaneously between overgrowth atoms and the substrate across planar interfaces. These adaptations have also been applied to an extended model which includes homogeneous strain and thickness. In this latter model, epitaxial orientations are predicted to be those which minimize strain and misfit energies together. Experimentally, A1N/GaN layered structures have been grown using a modified gas source MBE for the growth of SiC/A1N/GaN pseudomorphic layers is being constructed, it is described in detail.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1990
- Accession Number
- ADA230268
Entities
People
- Andrej Skerlavaj
- Larry Rowland
- Max W. Braun
- Robert F Davis
- Zlatko Sitar
Organizations
- North Carolina State University