Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN Thin Films and Subsequent Fabrication of Superlattice Structures Using AlN and InN
Abstract
In the research of this reporting period, A1N films and A1N/GaN layered structures have been grown and structurally, chemically and optically characterized. In addition, BN has been similarly deposited on cubic beta-SiC and diamond substrates. Strained layer superlattices have been fabricated for the first time between GaN and A1N. The energy offset was up to 260 me V for the superlattices with the thinnest barriers. A system for atomic layer epitaxy of GaN and A1N has been designed and is under construction. Cubic BN was deposited on the aforementioned substrates; however, significant carbon was also present. The latter problem has now been resolved. Laser ablation of hexagonal BN was also studied; however, only amorphous, wurtzite and hexagonal (graphitic) BN was detected in the films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1990
- Accession Number
- ADA230269
Entities
People
- Michael J. Paisley
- Robert F Davis
- Zlatko Sitar
Organizations
- North Carolina State University