The Use of Tris(trimethylsilyl)arsine to Deposit GaAs by OMCVD

Abstract

Chemical vapor deposition experiments using (Me3Si) 3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi- conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from (C6F5)3GaAs(SiMe3)3 at 500 degrees C and low pressures.

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Document Details

Document Type
Technical Report
Publication Date
Dec 14, 1990
Accession Number
ADA230413

Entities

People

  • A. D. Berry
  • A. P. Purdy
  • J. D. Johansen
  • J. W. Pasterczyk
  • R. L. Wells

Organizations

  • Duke University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Vapor Deposition
  • Chemistry
  • Diffraction
  • Electron Spectroscopy
  • Electrons
  • Materials
  • Measurement
  • Military Research
  • Radiation
  • Spectra
  • Spectroscopy
  • Vapor Deposition
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene