GaAs/AlGaAs Electronics and InGaAs(P) Optoelectronics on InP Substrates by Gas Source MBE
Abstract
Our research goals are to design and implement novel schemes in order to utilize the optical and electrical properties of III-V semiconductors devices grown by MBE and to enhance their performance. Intimately tied to this is the characterization of optical devices such as modulators, lasers, and detectors as well as an understanding of the underlying optical processes involved. GaAs based materials as well as InGaAs and InP material systems are investigated for possible optoelectronic integration. Specifically, by using Gas Source MBE (GSMBE), we intend to obtain high quality InP based materials as well as GaAs electronic devices grown of InP substrates. The latter being an initial step towards the optoelectronic integration of GaAs with InP. GSMBE provides excellent control over the AS/P ration which cannot be achieved by conventional solid source MBE. Utilization of this technique will lead to the realization of low threshold, low current density CW laser in InGaAsP material system.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1990
- Accession Number
- ADA230622
Entities
People
- H. Morkoc
Organizations
- University of Illinois Urbana–Champaign