Modeling Failure and Reliability in New-Generation Devices

Abstract

A two-dimensional device simulation program (UMDFET) designed to produce information on the reliability of both silicon and compound- semiconductor electron devices was constructed. The program uses either the drift-diffusion description of carrier transport, for relatively large devices, or the newer energy transport method of solving the Boltzmann Transport Equation, for submicron-scale devices. Multi-layered heterostructure MESFETs, as well as silicon MOSFETs, may be simulated. UMDFET has been used to examine performance and reliability of silicon MOSFETs with channel lengths below 0.2 micron, showing that reliability of such small devices is not as great a problem as was originally thought. This report comprises abstracts of papers submitted, presented at conferences, and published in journals, based on work performance under the referenced grant.

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Document Details

Document Type
Technical Report
Publication Date
Jul 15, 1990
Accession Number
ADA230998

Entities

People

  • Jeffrey Frey

Organizations

  • University of Maryland

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Compound Semiconductors
  • Computational Fluid Dynamics
  • Electrical Engineering
  • Energy
  • Engineering
  • Equations
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Materials
  • Monte Carlo Method
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Simulators
  • Solid State Electronics
  • Two Dimensional

Fields of Study

  • Engineering

Readers

  • Computational Fluid Dynamics (CFD)
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics