Nucleation and Growth of Diamond on Si, Cu and Au Substrates

Abstract

A hot tungsten filament reactor was used to deposit diamond films on silicon, copper and gold substrates. Diamond can be readily nucleated on all three substrates, but the nucleation density is greatly enhanced by prescratching with o.25 um diamond paste. Visual examination of photomicrographs of diamond crystallites formed on prescratched silicon substrates indicates that no new nuclei are formed between one and two hrs of deposition. However, new nuclei are formed throughout this period when the substrate is copper or gold. Deposited diamond films adhered to silicon substrates, but could be readily removed from copper and gold substrates.

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Document Details

Document Type
Technical Report
Publication Date
Dec 21, 1990
Accession Number
ADA231044

Entities

People

  • Aaron Wold
  • C. M. Niu
  • G. Tsagaropoulos
  • J. Baglio
  • Kirby Dwight

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Chemistry
  • Classification
  • Diamond Films
  • Diffraction
  • Electron Diffraction
  • Films
  • Hydrogen
  • Materials
  • Military Research
  • Raman Spectra
  • Rhode Island
  • Silicon Carbide
  • Spectra
  • United States
  • Universities
  • Vapor Deposition

Readers

  • Thin Film Deposition Science.