Efficient GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.29 Micrometers

Abstract

Diode lasers emitting at 2.29 omega have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kA/cm2 and differential quantum efficiencies as high as 18% per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 omega.

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Document Details

Document Type
Technical Report
Publication Date
Sep 24, 1990
Accession Number
ADA231223

Entities

People

  • H. K. Choi
  • S. J. Eglash

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Current Density
  • Diodes
  • Efficiency
  • Emission Spectra
  • Energy
  • Energy Bands
  • Energy Gaps
  • Heterojunctions
  • Laser Diodes
  • Lasers
  • Quantum Efficiency
  • Semiconductor Diodes
  • Semiconductors
  • Spectroscopy
  • Substrates

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Quantum Computing