Silicon Carbide Semiconductor Device Fabrication and Characterization

Abstract

A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.

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Document Details

Document Type
Technical Report
Publication Date
Feb 08, 1990
Accession Number
ADA231299

Entities

People

  • Kalyan Kumar Das
  • Robert F Davis

Organizations

  • North Carolina State University

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Conduction Bands
  • Crystal Structure
  • Energy Bands
  • Fabrication
  • Fermi Levels
  • High Density
  • High Temperature
  • Ion Implantation
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Metals
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene