PEMOCVD Ferroelectric Nonvolatile Radiation-Hard Memories. Phase 1

Abstract

The purpose of this Phase I effort was to determine the feasibility of depositing ferroelectric lead zirconium titanium oxide (PZT) thin films using plasma enhanced-metalorganic chemical vapor deposition (PEMOCVD). To obtain PZT films that are useful for integrated circuit ferroelectric memories, the films should be deposited directly in the perovskite phase at the lowest possible substrate temperatures. This would circumvent problems from high temperature deposition and annealing that have hindered development of ferroelectric thin films devices. These problems include thermally induced strain in the films and incompatibility with standard semiconductor processing.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1990
Accession Number
ADA231310

Entities

People

  • Jeff Bullington
  • Robert Ellis

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Diffraction
  • Electrical Properties
  • Low Temperature
  • Material Degradation Processes
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Testing
  • Oxide Films
  • Oxides
  • Semiconductor Devices
  • Semiconductors
  • Silica Glass
  • Thin Films
  • Titanium Oxides
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene