Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide via Extraction/Exchange Processes

Abstract

The primary focus of the research for this grant has been the atomic layer epitaxy (ALE) of Si; however, the ALE of SiC has also received serious consideration. A Computer assisted study, based on the free energy minimization of a thermodynamic system undergoing equilibrium reactions has shown that the progressive decomposition of SiH2Cl2 (the Si precursor of choice in this study) results in the products of SiCl2, H2, SiH2Cl2, HCl and Si. Moreover, above 600 C, SiCl2 is stable. Thus SiCl2 adsorbed onto the surface will not decompose. It is predicted to react with H2, forming Si on the surface.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1991
Accession Number
ADA231348

Entities

People

  • Jill Little
  • Joe Sumakeris
  • Robert F Davis
  • Robert Macintosh
  • Salah Bedair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Chemical Reactions
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Computers
  • Desorption
  • Energy
  • Epitaxial Growth
  • Fabrication
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Measurement
  • Silicon Carbide
  • Spectra

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology
  • Systems Analysis and Design