Hot Electron Stress Testing of Submicron Transistors

Abstract

Hot electrons are a major reliability concern for submicron metal- oxide-semiconductor (MOS) transistors. This report details experimental results of long-term hot electron degradation. theoretical explanation of test results is provided. The implications of these results with respect to the validity of long-term reliability predictions is also discussed.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1990
Accession Number
ADA231518

Entities

People

  • Paul M. Restine

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Acquisition
  • Degradation
  • Electric Fields
  • Electronics
  • Electrons
  • High Temperature
  • Low Temperature
  • Materials
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxides
  • Reliability
  • Saturation
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Psychometric Testing or Psychological Assessment.
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics