Kinetic Aspects of Lattice Mismatch in Molecular Beam Epitaxial Growth on Planar and Patterned Substrates

Abstract

This, the Final Scientific Report on AFOSR Grant 86-0166, provides the highlights of the work accomplished under the project. While the details are to be found in the publications listed as part of the report, the major accomplishments are: (1) identification of growth kinetics optimized and reproducible growth, independent of machine parameters, of GaAs/AlGaAs and GaAs/ InGaAs layered structures via the usage of real time reflection high energy electron diffraction in molecular beam epitaxical growth, (2) the first realization of high mobility inverted HEMT structures, (3) demonstration of the dominant scattering from band edge discontinuity fluctuations, rather than the commonly held view of well width fluctuations in high quality GaAs/AlGaAs quantum well structures.

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Document Details

Document Type
Technical Report
Publication Date
Nov 20, 1990
Accession Number
ADA231636

Entities

People

  • A. Madhukar

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Diffraction
  • Dynamics
  • Electron Diffraction
  • Electrons
  • Epitaxial Growth
  • Heterojunctions
  • High Energy
  • Materials
  • Materials Science
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Physics
  • Quantum Wells
  • Scattering
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Quantum Computing