Neutron Degradation of the I-V Characteristics of AlGaAs/GaAs Modulation-Doped Field Effect Transistors

Abstract

A triangular-well, one-subband depletion layer model has been developed which applies over the range of I-V characteristics from subthreshold to saturation, some nine orders of magnitude in source-drain current. The model has been extended to describe neutron degradation of source-drain current and transconductance.

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Document Details

Document Type
Technical Report
Publication Date
Jan 04, 1991
Accession Number
ADA231696

Entities

People

  • Michael J. O'loughlin
  • Richard J. Krantz
  • Walter L. Bloss

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Materials and Manufacturing Processes
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Charge Density
  • Classification
  • Corporations
  • Degradation
  • Electronics
  • Field Effect Transistors
  • Linear Regression Analysis
  • Mobility
  • Modulation
  • Regression Analysis
  • Resistance
  • Security
  • Space Systems
  • Standards
  • Transistors

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology