Double-Crystal X-Ray Diffraction Studies of Si Ion-Implanted Laser- Annealed GaAs

Abstract

Double-crystal x-ray rocking curves and topographs have been used to study the relief of strain produced by pulsed laser annealing in 28Si+ ion- implanted GaAs. X-ray rocking curves of 140 keV 2 x 1014/cm2 as-implanted GaAs indicated that the upper 2500 angstroms of the sample had been strained to a maximum of 0.38. Rocking curves from two of a single-shot laser anneal sites with the highest energy densities (and largest areas of annealing) indicated that the ion-implantation strain had been almost completely relieved. X-ray rocking curves of the 180 keV 5 x 1015/cm2 as-implanted GaAs revealed that the surface of the sample has been strained to a depth of 6000 angstroms with a maximum strain of 0.50%. Rocking curves from rastered laser anneal sites indicated that considerable strain remained in the sample.

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Document Details

Document Type
Technical Report
Publication Date
Jan 08, 1991
Accession Number
ADA232006

Entities

People

  • Paul M. Adams

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Annealing
  • Classification
  • Corporations
  • Crystal Structure
  • Diffraction
  • Geometry
  • Ion Implantation
  • Lasers
  • Materials
  • Materials Science
  • Plastic Explosives
  • Radiation
  • Security
  • Three Dimensional
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy