Bipolar Transistors in Silicon-on-Sapphire (SOS): Effects of Nanosecond Thermal Processing

Abstract

Nanosecond thermal processing (NTP) using an XeCl excimer laser was employed in the fabrication of npn bipolar transistors in SOS. Functional devices, with current gain Beta approaching 100, were obtained. The deleterious effects of diffusion pipes in SOS material were minimized using rapid laser activation of ion implanted dopant.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1990
Accession Number
ADA232008

Entities

People

  • B. W. Offord
  • Kurt H. Weiner
  • S. D. Russell

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Diffusion
  • Electronics
  • Electronics Laboratories
  • Excimer Lasers
  • Fabrication
  • Failure Mode And Effect Analysis
  • Laser Mediums
  • Lasers
  • Materials
  • Nanosecond Time
  • Npn Transistors
  • Solid Phases
  • Solid State Electronics
  • Transistors

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy