Optoelectronic III-V Heterostructures on SI Substrates

Abstract

The objectives of this research program is to investigate the epitaxial growth and properties of heterostructures of the III-V semiconductors, particularly the InGaAsP/InP system, on Si substrates. The heterostructures are being grown by gas-source molecular beam epitaxy (GSMBE), a technique which have previously used to produce high performance optoelectronic devices using lattice-matched InGaAs/InP and LnGaAsP/InP heterostructures and to grow high quality InP layers on Si wafers. The research is focused on exploring methods to reduce misfit dislocations and thus achieve InGaAsP/InP heteroepitaxial materials suitable for high quality optoelectronic devices on Si substrates. InP and lattice-matched InGaAsP alloys are the primary material for high speed optoelectronic telecommunication systems, and an InP-on-Si materials technology would enable VLSI photonics to become a reality.

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Document Details

Document Type
Technical Report
Publication Date
Sep 14, 1990
Accession Number
ADA232035

Entities

People

  • Gary Y. Robinson

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Communication Systems
  • Crystals
  • Detectors
  • Electronics Industry
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Heterojunctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Power Electronics
  • Quantum Wells
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics