Photoresponse Studies of Ion-Damaged Germanium for Optoelectronic Switch Applications

Abstract

In light of the potential of germanium optoelectronic (OE) switches for OE/time division multiplexing (OE/TDM) applications, preliminary research into the effect of crystalline damage on its photoresponse was performed. This document reports the results of this proposed method to decrease the photocurrent decay time for high-speed OE switches.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1990
Accession Number
ADA232091

Entities

People

  • S. D. Russell

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystals
  • Diffraction
  • Fabrication
  • Integrated Circuits
  • Laser Diodes
  • Lasers
  • Mass Spectrometry
  • Materials
  • Multiplexing
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Time Division Multiplexing
  • Very Large Scale Integration
  • X Rays

Fields of Study

  • Physics

Readers

  • Military Leadership and Professional Education.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics