Evaluation of Ferroelectric Materials for Memory Applications
Abstract
Ferroelectric materials have wide application in area such as piezoelectric transducers, pyroelectric detectors, and electro-optics, and now thin-film ferroelectric materials are being integrated with conventional semiconductor processes to produce memory devices. Memories based on this technology potentially offer nonvolatile data storage and extended read-write endurance in comparison with EEPROMs, without speed or power penalties. These memories are also radiation hard. Considerable interest in ferroelectric memory exists in the Department of Defense (DOD) because of these characteristics. However, several problems remain unsolved and no memory devices have been produced as yet. The physical mechanisms (as they are understood) are discussed, the claims made for the technology are examined, and the potential roadblocks, such as: cycle dependent fatigue, time dependent degradation of memory retention, and fabrication problems are evaluated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1990
- Accession Number
- ADA232112
Entities
People
- Carl E. Josefson
Organizations
- Naval Postgraduate School