Synthesis and Characterization of Indium-Arsenic Compounds Containing a Four-Membered In-Ad-In-As or In-As-In-Cl Ring: Crystal Structures of ((Me3SiCH2) 2InAs(SiMe3)2)2 and (Me3SiCH2)2InAs(SiMe3)2In(CH2SiMe3)2Cl

Abstract

Recently, organogallium-arsenic compounds containing four-membered rings consisting of mixed-bridging of the gallium atoms by one arsenic atom and one halogen atom have been synthesized via dehalosilyation between an organogallium halide and a silylarsine. Until now, our studies regarding the formation of mixed bridge systems involving the heavier elements of Groups III and V have focused only on gallium and arsenic. In order to investigate the generality of this behavior, analogous reactions utilizing an organoindium halide were carried out.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 25, 1991
Accession Number
ADA232368

Entities

People

  • A. Alvanipour
  • A. T. Mcphail
  • L. J. Jones
  • R. L. Wells

Organizations

  • Duke University

Tags

Communities of Interest

  • Air Platforms
  • C4I
  • Weapons Technologies

DTIC Thesaurus Topics

  • Arsenicals
  • Chemistry
  • Civil Engineering
  • Classification
  • Crystal Structure
  • Crystals
  • Diagrams
  • Elements
  • Governments
  • Melting Point
  • Military Research
  • Scattering
  • Security
  • Single Crystals
  • Spectra
  • United States
  • X Rays

Fields of Study

  • Chemistry

Readers

  • Organic Chemistry

Technology Areas

  • Microelectronics