In BASED III-V Microstructures with Novel Electronic Properties

Abstract

This program addresses the development of microstructures for high density and high speed electronics. The molecular beam epitaxy technology for InAs and GaSb were developed for growth in GaAs substrates. Three new single barrier negative resistance devices were demonstrated. Double barrier negative resistance devices based on InAs/AlSb/InAs/AlSb/InAs heterostructures were fabricated. These currently hold all the power and frequency records.

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Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1990
Accession Number
ADA232695

Entities

People

  • T. C. Mcgill Jr.

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Conduction Bands
  • Diffraction
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Frequency
  • Heterojunctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Power Electronics
  • Scattering
  • Semiconductors
  • Tunnel Diodes
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics