Development of Si/SiGe Heterostructures

Abstract

We have developed new molecular beam epitaxy (MBE) materials growth and doping processes for the fabrication of Si/SiGe heterostructure devices. We applied these new materials processes to the demonstration of cryogenic n-p-n Si/Si 1-x Gex/Si heterojunction bipolar transistors (HBT). This application has special significance as an enabling DoD technology for fast low noise, high performance readout and signal processing circuits for IR focal systems. We succeeded in developing reliable, versatile methods to grow very high quality Si/SiGe strained layer heterostructures and multilayers. In connection with this program we developed methods to dope the Si and SiGe with B, Sb and Ga. B and Sb were found to be the preferred dopants for p and n regions respectively, of our HBT devices. Our test devices clearly displayed gain enhancement due to the heterojunction and provided useful gains from room temperature down to 10K.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1991
Accession Number
ADA232747

Entities

People

  • J. L. Veteran
  • M. H. Young
  • R. J. Hauenstein

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Classification
  • Diffraction
  • Epitaxial Growth
  • Fabrication
  • Focal Planes
  • Heat Of Activation
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Resolution
  • Identification
  • Low Temperature
  • Materials
  • Metal Contacts
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Security

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology