High Quality Three Dimensional Electron Gases in Semiconductors
Abstract
We have successfully pursued the construction of high quality three- dimensional electron gases by the growth of wide parabolic GaAs quantum wells with modulation doping. The concept has worked -- by growth of wide, specially shaped wells with remote doping, we can allow high mobility electrons to spread out over regions thousands of Angstroms thick and have three-dimensional behavior without the impurity scattering and carrier freezeout of conventional semiconductors. Electron mobilities of several hundred thousand cm2/Vs have been achieved. The wide parabolically shaped well system is fundamentally new, and the structures are showing a variety of new behavior. Electrical quantum conductivity phenomena due to occupancy of several subbands have been observed. Cyclotron resonance, plasma resonance, and coupled cyclotron/plasma resonances have been found and all have characteristics of a three-dimensional gas in a parabolic potential.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 08, 1991
- Accession Number
- ADA232779
Entities
People
- Arthur C. Gossard
Organizations
- University of California, Santa Barbara