Doping and Diffusion in HgCdTe

Abstract

The structural properties and electrical activity of impurities (indium, arsenic, antimony) and self-interstitials (mercury, cadmium, tellurium) in CdTe and HgCdTe alloys have been studied by theoretical and computer calculations, The problems addressed included: - the source of the midgap tunneling levels in Hg-rich HgCdTe, - the cause of electrical inactivity in In- doped CdTe grown by non-photoassisted molecular beam epitaxy (MBE), - identification of paths for impurity and self-diffusion, - the effects of lattice distortion on defect properties and interaction.

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Document Details

Document Type
Technical Report
Publication Date
Jan 28, 1991
Accession Number
ADA232950

Entities

People

  • C. G. Morgan-pond

Organizations

  • Wayne State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Computational Science
  • Crystal Structure
  • Distortion
  • Electron Density
  • Electron Energy
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Fermi Levels
  • First Principles Calculations
  • Materials Science
  • Molecular Dynamics
  • Semiconductors
  • Structural Properties

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.