High Temperature Interactions of Metallic Matrices with Ceramic Reinforcements

Abstract

Interfacial reactions of SiC with selected high temperature metals have been studied at temperatures between 800 and 1200 deg C for various times. The metals include Nb, a strong carbide former, Co, Ni, Pt, and stainless steel. Reactions of the metals with SiC in this temperature range were extensive; various metal silicides, metal carbides, ternary metal-silicon-carbides, and unreacted carbon were formed as layered reaction products in the reaction zones. Thin films of Al2O3 in the 100 to 500 nm thickness range are shown to be effective in minimizing the reaction between Nb and SiC. In some system, massive or localized interfacial melting was observed as a result of metal-silicide formation.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1990
Accession Number
ADA232967

Entities

People

  • Ameya Joshi
  • J. Wadsworth
  • T. C. Chou

Organizations

  • Lockheed Martin Missiles and Space

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Ceramic Materials
  • Chemical Analysis
  • Chemical Synthesis
  • Chemistry
  • Composite Materials
  • Crystal Structure
  • Material Degradation Processes
  • Materials
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Mechanical Properties
  • Refractory Metals
  • Solid Solutions
  • Spectra
  • Titanium

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.