High Temperature Interactions of Metallic Matrices with Ceramic Reinforcements
Abstract
Interfacial reactions of SiC with selected high temperature metals have been studied at temperatures between 800 and 1200 deg C for various times. The metals include Nb, a strong carbide former, Co, Ni, Pt, and stainless steel. Reactions of the metals with SiC in this temperature range were extensive; various metal silicides, metal carbides, ternary metal-silicon-carbides, and unreacted carbon were formed as layered reaction products in the reaction zones. Thin films of Al2O3 in the 100 to 500 nm thickness range are shown to be effective in minimizing the reaction between Nb and SiC. In some system, massive or localized interfacial melting was observed as a result of metal-silicide formation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1990
- Accession Number
- ADA232967
Entities
People
- Ameya Joshi
- J. Wadsworth
- T. C. Chou
Organizations
- Lockheed Martin Missiles and Space