Molecular Beam Epitaxial Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

Abstract

The research program on the growth by Molecular Beam Epitaxy of Hg- based alloys and heterostructures carried out in the Microphysics Laboratory at the University of Illinois at Chicago and supported by this contract has been extremely successful. Tremendous progress has been achieved towards the improvement of HgCdTe and related heterostructures in terms of structural, electrical and optical properties. A very important step has been passed through in the control of the twinning process during the growth in the (111)B orientation. Furthermore, it has been clearly established for the first time that twins or related dislocations are acting as acceptors in HgCdTe and are detrimental for diode performance, what was suspected but never proved until our conclusive experiments.

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Document Details

Document Type
Technical Report
Publication Date
Nov 13, 1989
Accession Number
ADA233027

Entities

People

  • Jean-pierre Faurie

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Band Structures
  • Chemistry
  • Compound Semiconductors
  • Crystal Lattices
  • Crystals
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Fermi Levels
  • Mass Spectrometry
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Optics
  • Quantum Wells
  • Semiconductors
  • Solid State Physics
  • Spectra

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics