Simulations of High-Rate Diamond Synthesis: Methyl as Growth Species
Abstract
The results of numerical simulations of two high-rate diamond growth environments (oxygen-acetylene torch and DC arcjet) are reported. The calculations account in detail for boundary-layer transport, gas chemistry, and gas-surface chemistry. Diamond growth rates are calculated self-consistently with the gas-phase concentrations, using a recently-proposed methyl growth mechanism. The calculated growth rates agree well with the measured values, indicating that this growth mechanism can account for both high and low-rate diamond growth.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1991
- Accession Number
- ADA233079
Entities
People
- D. G. Goodwin
Organizations
- California Institute of Technology