Semiconductor Diamond Technology

Abstract

This report surveys the progress in a number of research activities pursued this quarter at Research Triangle Institute. Gas phase analysis in diamond producing charges, Determination of substrate effects on the growth of homoepitaxial diamond, F2/CH4 gas interactions as a function of temperature, Hydrogen-halogen exchange reactions, Fabrication and testing of a diamond IGFET, and investigation of LiF as an in-situ dopant for diamond. These parallel efforts are designed to advance the state-of-the-art in semiconducting diamond technology. These efforts are encompassing development of doping and fabrication techniques for diamond devices while they are also developing novel deposition technique targetting successful heteroepitaxial growth. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1991
Accession Number
ADA233085

Entities

People

  • John B. Posthill
  • R. E. Thomas
  • Robert J. Markunas
  • Ronald A. Rudder

Organizations

  • RTI International

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystal Structure
  • Electron Beams
  • Epitaxial Growth
  • Exchange Reactions
  • Field Effect Transistors
  • Mass Spectroscopy
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Raman Spectroscopy
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Vapor Deposition
  • X Rays

Readers

  • Academic Conference Management
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics