Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials

Abstract

Strained layer GaInAs/GaAs heterostructures for improved high frequency high performance as a result of strained modified valence band structure continue to be investigated. The first demonstration of improved microwave frequency bandwidths arose from increased differential gain for single strained quantum well structures. Optimized single quantum well growth is therefore undertaken to initiate the development of multiple quantum well lasers in 1990 to further increase differential gain. Properties of strained GaInAs on InP have also been studied. A first attempt to grow and fabricate a laser on InP has been successful, thus opening the opportunity to investigate strained lasers on InP. A first look into the theoretical properties of strained quantum wells has begun.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1991
Accession Number
ADA233109

Entities

People

  • Lester F. Eastman
  • S. D. Offsey
  • William J. Schaff

Organizations

  • Cornell University College of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Energy Bands
  • Field Effect Transistors
  • Frequency
  • Heterojunctions
  • High Temperature
  • Laser Applications
  • Lasers
  • Materials
  • Materials Science
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing