Inhibition of Atomic Hydrogen Etching of Si(111)
Abstract
Subsurface boron doping reconstructs the Si(111) surface and alters the electronic character of the surface Si atoms. The interaction of atomic hydrogen with the boron-modified Si(111) - (V3xV3) - R30 surface was studied using temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS) and low energy electron diffraction (LEED). In comparison to the Si(111) - (7x7) surface, we observe a significantly reduced hydrogen saturation coverage, measured by TPD and HREELS, and the absence of silane production. The ordered (1/3 ML) subsurface boron atoms passivate the surface Si atoms and reduce their reactivity with atomic hydrogen. This leads to a surface condition causing suppression of silicon etching by atomic hydrogen, compared to the unmodified Si(111) - (7x7) surface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 04, 1991
- Accession Number
- ADA233138
Entities
People
- J. T. Yates Jr.
- M. L. Colaianni
- P. J. Chen
Organizations
- University of Pittsburgh