Semiconductor Diamond Technology
Abstract
This report summarizes results from the 1990 Semiconducting Diamond Technology Program. The advancement of existing technologies such as the low pressure rf-plasma assisted CVD technology has allowed the development of new techniques for diamond deposition. The research has emphasized growth techniques for enhancing diamond heteronucleation. Highlights are listed below: Epitaxial lateral overgrowth was demonstrated; Diamond Schottky devices were fabricated with Li doping; Boron doped IGFETs were fabricated and tested; Gas analysis identified C2H2 by-product; Mo interlayers were deposited on Ni for heteronucleation studies; Hydrogen-halogen exchange reactions were demonstrated; A CF4/H2 system produced direct nucleation on Si(100); and Nucleation enhancement local to graphite fibers was demonstrated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1991
- Accession Number
- ADA233293
Entities
People
- John B. Posthill
- R. E. Thomas
- Robert J. Markunas
- Ronald A. Rudder
Organizations
- RTI International