A Program in the Chemistry of Electronic Materials. Task 1. New Organometallic Precursors for the Low Pressure Chemical Vapor Deposition of Refractory Materials for Electronics
Abstract
The principal focus of this Project was the design and synthesis of volatile organometallic precursors for the LPCVD of AlN, SiC, and other materials of interest for applications in electronics. The pyrolytic decomposition of theses compounds were investigated using mass spectrometry and IR spectroscopy and the resultant thin films examined by Auger spectroscopy and SEM/TEM to determine the composition, microstructure, and purity of the phases present. Through the use of selected precursors of this type, high quality, films of stoichiometric AlN and SiC were obtained at temperatures (500 - 800 C) well below that employed in previous investigations. Thin films of both AlN and the cuprate superconductors were also prepared by pyrolysis of solution-applied polymeric precursor films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1991
- Accession Number
- ADA234315
Entities
People
- J. A. Moore
- L. V. Interrante
- R. R. Reeves
Organizations
- Rensselaer Polytechnic Institute