Luminescence and Lasing in II-VI Semiconductors.

Abstract

The objective of this contract was to develop a method for growth of bulk semiconducting material, suitable for monolithic infrared focal plane detectors, light emitting diodes, and laser structures. The project focused on narrow band gap HgMnTe alloys, semimagnetic semiconductors. HgMnTe is an infrared detector material with properties similar to those of HgCdTe in particular, HgMnTe electroluminescence more efficiently than HgCdTe, and p-type HgMnTe has higher conductivity than comparable p-HgCdTe; both features are advantageous in device applications.

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1990
Accession Number
ADA235019

Entities

People

  • August Witt

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Contracts
  • Crystal Growth
  • Detectors
  • Diagrams
  • Energy
  • Energy Bands
  • Focal Planes
  • Infrared Detectors
  • Luminescence
  • Magnetic Fields
  • Materials
  • Optical Properties
  • Physical Properties
  • Quantum Properties
  • Semiconductors
  • Temperature Gradients

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics