Non-Destructive Evaluation of Residual Stresses in Thin Films via X-Ray Diffraction Topography Methods.

Abstract

Quantitative x-ray diffraction topography techniques have been used to measure the residual strain magnitude and uniformity of deposition for Mo and W sputtered films on Si(100) substrates. High sensitivity rocking curve measurements were able to determine differential strains for films as thin as 2. 5nm; while Bragg angle contour mapping had similar sensitivity and was also able to assess coating uniformity and stress distribution over areas covering a whole wafer. Measurements of strain versus film thickness over a range of 2.5nm to 80nm showed that a critical thickness exists for maximum residual strain. Growth beyond this range produces stress relaxation. This non-destructive type of analysis could be employed on a wide range of film-substrate combinations.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1991
Accession Number
ADA235328

Entities

People

  • John C. Bilello

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Crystal Lattices
  • Electron Microscopy
  • Engineering
  • Failure Mode And Effect Analysis
  • Materials
  • Materials Science
  • Materials Testing
  • Measurement
  • Microstructure
  • Military Research
  • Photographic Film
  • Refractory Metals
  • Residual Stress
  • Students
  • Thin Films
  • X Rays

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Structural Health Monitoring of Composite Structures.
  • Thin Film Deposition Science.