A Program in the Chemistry of Electronic Materials
Abstract
Metal atom concentrations have been measured by atomic absorption to study plasma dry etching processes. The etch rate and the gas phase concentration of titanium metal atoms were observed as a function of total pressure during etching. A kinetic model and mechanisms was developed which fit these data and suggested a second order dependence on fluorine atoms. Using atomic emission actinometry this dependence was confirmed, supporting the proposed model. The gas phase reaction rate of Ti with SF5 was estimated to be fast, in the order of 10 percent of the collision rate. The results recently appeared in the literature. An analogous study was made on aluminum etching. While TiF was the etching product for titanium, AlCl3 appears to leave the metal surface when plasma etched with chlorine containing compounds. The work is being prepared for publication. The measurements of atoms was also applied to the production of metal films including both copper and tungsten. In both cases, metal atoms are made in the gas phase by reaction of H-atoms with metal precursors. Although the work requires further study for complete characterization of the deposited metal, the resultant films appear to be fine grained, adherent, and have good electrical properties. Reports of the work have been accepted for publication.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1991
- Accession Number
- ADA235563
Entities
People
- Robert R. Reeves
Organizations
- Rensselaer Polytechnic Institute