Compensating-Stress InAs Quantum Wells for High-Performance Electronic Devices

Abstract

In this contract we have investigated various approaches the InAs molar fraction in an InGaAs-channel MODFET. Conventional solid-source MBE and hydride-source MBE were used. Key accomplishments included: Establishing a baseline A1GaAs/InGaAs pseudomorphic MODFET technology. Using an (InAs) 2 (GaAs) 2 superlattice grown by migration-enhanced epitaxy at 400 C as better luminescence properties and device performance than MBE-grown random-alloy In0. 4Ga0.6 As as the channel layer. Setting up a gas-source MBE system with elemental group-III and doping sources and arsine and phosphine. Establishing precisely the V/III atomic ratio on the growing surface during gas-source MBE by using the RHEED oscillation technique in the group-V-limited growth mode. Obtaining some preliminary results on modulation-doped, pseudomorphic InGaP/ InGaAs.

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Document Details

Document Type
Technical Report
Publication Date
Nov 29, 1990
Accession Number
ADA236073

Entities

People

  • C. W. Tu

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Charge Density
  • Chemical Reactions
  • Crystal Lattices
  • Crystals
  • Diffraction
  • Electron Diffraction
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Fermi Levels
  • Field Effect Transistors
  • Geometry
  • High Electron Mobility Transistors
  • Measurement
  • Quantum Wells
  • Reaction Mechanisms
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing