Fundamental Properties and Device Applications of Ge(x)Si(1-x)/Si Superlattices
Abstract
The progress of the study of transport properties include the resonant tunneling and miniband transport in SiGe/Si heterostructures and a hot hole resonant tunneling transistor. Both light and heavy hole tunnelings were observed showing negative differential resistance. The tunneling species were identified by studying the magnetic field dependence of the tunneling peak positions. Our investigations have been extended for the study of miniband transport in SiGe/Si superlattices. In the area of quantum device, we have fabricated a hot hole resonant tunneling transistor. Preliminary results indicate that transistor action with controllable negative differential resistance can be achieved.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1990
- Accession Number
- ADA236098
Entities
People
- Kang L. Wang
Organizations
- University of California, Los Angeles