Structural and Electrical Properties of Titanium-Nickel Films Deposited onto Silicon Substrates

Abstract

Thin films of the shape memory alloy NiTi have been sputter-deposited onto p-type silicon substrates. Films that are initially amorphous may be crystallized by vacuum annealing. The crystalline films exhibit the B2->B19' phase change associated with the shape memory effect while remaining in contact with the silicon substrate. Transition temperatures were determined by resistance measurements and x-ray diffraction. The NiTi-Si contacts are diodes, as evidenced by their current-voltage characteristics; however, the effect of the phase change on the barrier height could not be determined.

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Document Details

Document Type
Technical Report
Publication Date
May 20, 1991
Accession Number
ADA236445

Entities

People

  • A. D. Johnson
  • Arthur B. Ellis
  • J. D. Busch
  • Kathleen R. Collen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Diffraction
  • Electrical Properties
  • Electron Spectroscopy
  • Films
  • Materials
  • Materials Processing
  • Military Research
  • Phase Transformations
  • Titanium
  • Transition Temperature
  • Transitions
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Thin Film Deposition Science.