Physics and Chemistry of Small Scale Structures for Modern Devices
Abstract
Under the support of this contract a number of major contributions were made to the development of nanostructures for microelectronics. Fundamental studies of growth have led to a better understanding of the role of strain in epitaxial layers grown on semiconductor substrates. The possibilities for growing superconductors on semiconductors and vice-versa have taken a major step forward with the successful growth of vanadium III silicon on silicon. The basic theory of tunnel devices including the role of phonons and self-consistency have been explored. New device structures based on the combination of III-V and II-VI semiconductors have also been examined.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1991
- Accession Number
- ADA236743
Entities
People
- T. C. Mcgill
Organizations
- California Institute of Technology