MOCVD of TlBaCACuO: Structure Property Relations and Progress Towards Device Processing

Abstract

Highly c-axis oriented Tl2Ba2CaCu2Ox thin films were grown on MgO(100) by MOCVD and post annealing processes. Resistive transition (R < or = 0.1 micro ohms-cm) of 105 K, critical current density as high as 100,000 Amps/sq cm (4 K) and surface resistivities 1/2 to 1/5 that of a gold standard at 17 GHz (77 K) were obtained with unpatterned films. Thin (0.1 microns) TlBaCaCuO films functioned as bolometers over a spectral range of 1.5 to 20 microns; no quantum or nonequilibrium effects were observed between 4 and 125 K. Fine features were delineated in the BaCaCuO thin films by wet chemical etching. After thallium incorporation, resistive transitions exceeding 103 K were observed in the patterned films.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 1991
Accession Number
ADA236882

Entities

People

  • Norihito Hamaguchi
  • Peter S. Kirlin
  • Robin A. Gardiner

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Current Density
  • Detection
  • Detectors
  • Fabrication
  • Films
  • High Temperature
  • Infrared Detectors
  • Materials
  • Measurement
  • Military Research
  • Optical Detection
  • Physical Properties
  • Resistance
  • Standards
  • Thin Films
  • Transitions

Readers

  • Superconducting Magnet Technology
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing