Atomic-Scale Charge Transport at the Si(001) Surface

Abstract

Scanning tunneling microscopy measurements of local surface photovoltage of the Si(001) surface reveal the existence of local charging produced by the tunneling current. Atomic-scale variations in the charge transport arise at characteristic defects, step edges and structures produced by epitaxial growth. The decay time of the surface charge is on the order of 10-10 sec. A Coulomb blockade energy of 0.35 eV is estimated from tunneling spectroscopy measurements of the bonding configuration of the type-B step.

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Document Details

Document Type
Technical Report
Publication Date
May 30, 1991
Accession Number
ADA236970

Entities

People

  • David G. Cahill
  • R. J. Hamers

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemistry
  • Classification
  • Electronic States
  • Electrons
  • Energy Bands
  • Energy Levels
  • Epitaxial Growth
  • Governments
  • Measurement
  • Microscopy
  • Military Research
  • Procurement
  • Quantum Tunneling
  • Security
  • Universities
  • Wisconsin

Fields of Study

  • Physics

Readers

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  • Semiconductor Device Technology